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Hall8800-II – Hall Effect Measurement System
System

hall8800


Accessories:

Thin Sample Holder
thin sample holder

Thick Sample Holder thick sample holder

Magnetic Kitmagnetic kit

Low Temperature Kitlow temperature kit

Features

  • Ohmic contact check
  • Large concentration and resistivity range
  • Measurement offset compensation
  • Flexible, modular hardware
  • Simplicity and accuracy operation software
  • Compact and easy-to-use desktop system

Specifications

  • Maximum sample size: 5mm x 5mm ∼ 20mm x 20mm
  • Measurement temperature: 300K
  • Magnet flux density: 0,8 Tesla
  • Magnet stability: 2% over 1 years
  • Uniformity: ± 1% over 30mm diamter from center
  • Pole gap: 17mm
  • Hall voltage range: 1μV to 12V
  • Source current range: 1nA to 20mA
  • Resistivity (Ohm-cm) range: 10-5 to 107
  • Mobility (cm2/Volt-sec) range: 1 ∼ 107 (room temperature)
  • Carrier concentration (cm-3) range: 10∼ 1021

Applications

The Swin Hall8800-II hall effect measurement system combiens hall effect measurement with van der pauw method four-point measurement to decide the characteristic such as resistivity, carrier concentration and mobility of various material including Si, Ge, SiGe, SiC, GaAs, InGaAs, InP, GaN, ZnO, Graphene etc. at both 300K and 77K for scientific research, education and production applications.

Hall8800II (1) – Katalog İndir

Hall8800II (2) – Katalog İndir


Hall8888 – Temperatue Controlled Hall Effect Measurement System
System

Hall8888

Main Fraim

Main fraim

Test Platform

Test platform

Operation Software

Operation software


Accessories:

Sample Holder

LN2 PumpLN2 pump

DewarDevar

Features

  • Ohmic contact check
  • Wide range concentration and resistivity
  • Pneumatic change magnetic polarity
  • High volumes liquid nitrogen tank
  • Flexible, modular hardware
  • Simplicity and accuracy operation software
  • Compact and easy-to-use desktop system

Specifications

  • Maximum sample size: 5mm x 5mm ∼ 20mm x 20mm
  • Measurement temperature: 77K ∼ 773K (Accuracy: ±0,5K)
  • Magnet flux density: 0,6 Tesla
  • Magnet stability: 2% over 1 years
  • Uniformity: ± 1% over 50mm diamter from center
  • Pole gap: 23mm
  • Hall voltage range: 1μV to 12V
  • Source current range: 1nA to 20mA
  • Resistivity (Ohm-cm) range: 10-5 to 107
  • Mobility (cm2/Volt-sec) range: 1 ∼ 107 (room temperature)
  • Carrier concentration (cm-3) range: 10∼ 1021

Applications

The Swin Hall8800-II hall effect measurement system combiens hall effect measurement with van der pauw method four-point measurement to decide the characteristic such as resistivity, carrier concentration and mobility of various material including Si, Ge, SiGe, SiC, GaAs, InGaAs, InP, GaN, ZnO, Graphene etc. at both 300K and 77K for scientific research, education and production applications.

HALL8888 – Katalog İndir


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